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31.
G. Kocher-Oberlehner W. Jantsch L. Palmetshofer A. Ulyashin 《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):347
Erbium (Er)- and oxygen (O)-doped Cz–Si was additionally doped with hydrogen, using plasma enhanced chemical vapour deposition. Photoluminescence (PL) spectra show a large enhancement especially for samples treated with solid phase epitaxy before hydrogenation and annealing at 900°C later. Secondary ion mass spectroscopy measurements give evidence for an enhanced diffusion of O and Er at this temperature towards the surface. Etching shows that the PL does not stem from the heavily doped surface layer but from a deeper region with lower Er concentration. This conclusion is supported by the appearance of the so-called “cubic” centre with low solubility. Comparing the PL yield of the hydrogenated samples to that of samples with similar Er volume concentration but without hydrogenation still gives a large enhancement. We thus conclude that hydrogen can enhance the solubility of the cubic centre in Si:Er,O. 相似文献
32.
Spontaneous emission behavior from atoms (or molecules) in one-dimensional photonic crystal with a defect is investigated. Taken all the TE and TM modes into account, the normalized spontaneous emission rate of the atom is calculated as a function of the position of the atom in the crystal. Results for both nonabsorbing dielectric structure and absorbing dielectric structure are presented. With the increase of the thickness of the defect in which the atoms are embedded, the oscillations of the spontaneous emission rate versus the position of the atom become dense and the lifetime distribution becomes narrow and sharp. The PC effect may lead to the coexistence of both accelerated and inhibited decay processes. 相似文献
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The present paper reports the dislocation unpinning model of acoustic emission (AE) from alkali halide crystals. Equations
are derived for the strain dependence of the transient AE pulse rate, peak value of the AE pulse rate and the total number
of AE pulse emitted. It is found that the AE pulse rate should be maximum for a particular strain of the crystals. The peak
value of the AE pulse rate should depend on the volume and strain rate of the crystals, and also on the pinning time of dislocations.
Since the pinning time of dislocations decreases with increasing strain rate, the AE pulse rate should be weakly dependent
on the strain rate of the crystals. The total number of AE should increase linearly with deformation and then it should attain
a saturation value for the large deformation. By measuring the strain dependence of the AE pulse rate at a fixed strain rate,
the time constantτ
s for surface annihilation of dislocations and the pinning timeτ
p of the dislocations can be determined. A good agreement is found between the theoretical and experimental results related
to the AE from alkali halide crystals. 相似文献
35.
Baoqing Zeng Ning Liu Zhonghai Yang 《International Journal of Infrared and Millimeter Waves》2004,25(11):1621-1631
Vacuum microelectronic triode performance, based upon a unit cell with a nanotube field emitter, gate, and anode, was evaluated via computer simulation. Electron emission was calculated from the modified Fowler-Nordheim equation. The dependence of emitted current, upon geometrical factors, e.g., nanotube radius, nanotube height, and gate's hole radius, is shown. The device design parameters of trans-conductance, and cutoff frequency have been calculated, which show that this structure can be used as a microwave and millimeter wave amplifier. Electron current flux is shown for time-dependent 1–Thz sinusoidal variation frequency input. 相似文献
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38.
In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH3)2AlH, a surface reaction dominated below a (CH3)2AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength. 相似文献
39.
测量了Cr^4+,YAG、Cr^4+,Mg2SiO4晶体在室温和液氮温度下的荧光光谱,吸收光谱和激发态寿命,讨论了温度变化时,两种晶体中Cr^4+近红外辐射积分强度变化与激光发态寿命变化的关系,得出结论:在77K ̄300K范围内,Cr^4+的^3T2能级荧光辐射截面本身受温度影响不大,Cr^4+辐射荧光的变化,主要是由无辐射弛豫速率随温度变化而引起的。 相似文献
40.
微腔激光器的发展与应用 总被引:1,自引:0,他引:1
本文探讨了微腔激光器的分类、基本原理及特点,并简单介绍了目前几种微型激光器的发展及应用。 相似文献